SSM3K318T 2009-04-09 1 toshiba field-effect transistor silicon n-channel mos type (u-mos ) SSM3K318T load switching applications high-speed switching applications ? 4.5 v drive ? low on-resistance : r ds(on) = 145 m ? (max) (@v gs = 4.5 v) : r ds(on) = 107 m ? (max) (@v gs = 10 v) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v dc i d 2.5 drain current pulse i dp 5.0 a drain power dissipation p d (note 1) 700 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note1: mounted on an fr4 board. (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = 10ma, v gs = 0 v 60 ? ? drain-source breakdown voltage v (br) dsx i d = 10ma, v gs = -20 v 35 ? ? v drain cut-off current i dss v ds = 60 v, v gs = 0 v ? ? 1 a gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = 5 v, i d = 1 ma 1.8 ? 2.8 v forward transfer admittance ? y fs ? v ds = 5 v, i d = 2.0 a (note 2) 3.7 7.4 ? s i d = 2.0 a, v gs = 10 v (note 2) ? 83.5 107 drain?source on-resistance r ds (on) i d = 1.0 a, v gs = 4.5 v (note 2) ? 101 145 m input capacitance c iss ? 235 ? output capacitance c oss ? 30.5 ? reverse transfer capacitance c rss v ds = 30 v, v gs = 0 v, f = 1 mhz ? 23.0 ? pf total gate charge q g ? 7.0 ? gate-source charge q gs ? 4.8 ? gate-drain charge q gd v dd = 30 v, i ds = 2.5 a v gs = 10 v ? 2.2 ? nc turn-on time t on ? 14.0 ? switching time turn-off time t off v dd = 30 v, i d = 1.0 a, v gs = 0 to 4.5 v, r g = 10 ? 9.5 ? ns drain-source forward voltage v dsf i d = -2.5 a, v gs = 0 v (note 2) ? -0.83 -1.2 v note2: pulse test unit: mm 0.15 00.1 0.160.05 0.70.05 2.90.2 0.950.95 1.6-0.1 +0.2 2.8-0.3 +0.2 1.90.2 0.40.1 jedec D jeita D toshiba 2-3s1a weight: 10 mg (typ.) tsm 1: gate 2: source 3: drain
SSM3K318T 2009-04-09 2 switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) usage consideration let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to be low (1 ma for the SSM3K318T). then, for norma l switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on). take this into consideration when using the device handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) v out v dd = 30 v r g = 10 d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 4.5 v 0 10 s r g t f t on 90% 10% 4.5 v 0 v 10% 90% t off t r v dd v ds ( on ) 1 2 3 kdx 1 2 3
SSM3K318T 2009-04-09 3 drain?source on-resistance r ds (on) (m ? ) 0 gate?source voltage v gs (v) 0 100 300 r ds (on) ? v gs 10 20 200 i d = 2.0a common source 25 c ta = 100 c ? 25 c drain current i d (a) r ds (on) ? i d drain?source on-resistance r ds (on) (m ? ) 0 1 3 0 200 300 24 v gs = 10 4.5 v common source ta = 25c 5 100 ambient temperature ta (c) r ds (on) ? ta drain?source on-resistance r ds (on) (m ? ) 0 ? 50 0 50 150 300 100 100 i d = 2.0 a / v gs = 10 v common source 1.0a / 4.5 v 200 gate?source voltage v gs (v) i d ? v gs drain current i d (a) 0 0.1 1 0.001 0.01 0.0001 5.0 1.0 10 common source v ds = 5 v ta = 100 c ? 25 c 25 c 3.0 4.0 2.0 drain?source voltage v ds (v) i d ? v ds drain current i d (a) 0 0 0.4 0.6 1.0 1 0.8 0.2 2 5 3 common source ta = 25 c 10 v v gs = 3.0 v 3.5v 4.0 v 4 4.5v ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) 3.0 0 ? 50 0 150 1.0 50 100 common source v ds = 5 v i d = 1 ma 2.0
SSM3K318T 2009-04-09 4 drain?source voltage v ds (v) c ? v ds capacitance c (pf) 1 0.1 1 10 100 100 1000 300 30 c iss c oss c rss common source ta = 25 c f = 1 mhz 10 3 drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.01 0.001 0.1 1 10 1 100 3 0.3 0.03 30 0.01 0.1 10 common source v ds = 5 v ta = 25 c -1.0 100 c 25 c ? 25 c drain reverse current i dr (a) drain?source voltage v ds (v) i dr ? v ds 0 1 10 0.01 0.1 0.001 -0.2 -0.6 -0.4 -1.2 -0.8 common source v gs = 0 v g d s i dr drain current i d (a) switching time t (ns) t ? i d 1 0.01 100 0.1 1000 1 10 10 t off t f t on t r common source v dd = 30 v v gs = 0 to 4.5 v ta = 25 c r g = 10 total gate charge qg (nc) dynamic input characteristic gate?source voltage v gs (v) 0 0 4 4 8 10 6 2 common source i d = 2.5a ta = 25c vdd=30v 2 6 8
SSM3K318T 2009-04-09 5 ambient temperature ta (c) p d ? t a drain power dissipation p d (mw) 800 0 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 a b a: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 0.8 mm 2 3) transient thermal impedance rth (c/w) pulse width t w (s) r th ? t w 1 100 1000 10 0.001 0.01 0.1 1000 1 10 100 a: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 0.8 mm 2 3) a b
SSM3K318T 2009-04-09 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. expor t administration regulations. ex port and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applicable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations.
|
